ACHIP: Recent Progress (>300MeV/m)
Author: Robert L. Byer
Event: OSA Traveling Lecture Talk, Laval University, Quebec City
Presentation Date: Tuesday, November 18, 2014
Laser acceleration in dielectric structures offers a new approach to the next generation of accelerators. The recently demonstrated gradient of 300MeV/m is a first step toward an accelerator-on-a-chip fabricated using modern lithographic methods. Accelerators on a chip enable attosecond physics from XUV to X-ray region and open the possibility of TeV energy scale physics in the future.